Medium voltage MOS

　　 The medium voltage MOSFET is manufactured using FZWELEC micro trench and planar process technology. The advanced technology and cell structure make the product realize the maximum power density, thereby greatly reducing the conduction loss during the current conduction process, and has low conduction resistance, superior switching performance and high avalanche breakdown tolerance. .

　　1, lower gate charge,

　　2, lower reverse transmission capacitance

　　3, faster switching speed

　　4, higher dv/dt capability

　　 Super Junction MOS

　　 High-voltage power MOSFETs are manufactured using FZWELEC Superjunction MOS technology platform, which has very low conduction loss and switching loss. The power converter has high efficiency, high power density, and improved thermal behavior. At the same time, the leading single-layer epitaxial process technology is adopted to provide a more sufficient withstand voltage margin for system applications, simplify the difficulty of circuit design, and provide higher system reliability.

　　1, extremely high power conversion efficiency

　　2, extremely low conduction power loss

　　3, extremely low switching power loss and driving power loss

　　4, provide a very comprehensive package classification such as TO200, DFN, TO252, etc.

　　5, sufficient withstand voltage margin and current carrying capacity